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| NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0808ATG TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS 75 RDS(ON) 8m ID 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 Power Dissipation L = 0.55mH L = 0.1mH TC = 25 C TC = 100 C Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 1 SYMBOL VGS LIMITS 20 80 55 250 40 400 20 192 76 -55 to 150 275 UNITS V TC = 25 C TC = 100 C ID IDM IAR EAS EAR PD Tj, Tstg TL A mJ W C SYMBOL RJC RJA RCS TYPICAL MAXIMUM 0.65 62.5 UNITS C / W 0.5 Pulse width limited by maximum junction temperature. Duty cycle 1 ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 C 75 1.5 2.3 4.0 250 1 10 nA A V LIMITS UNIT MIN TYP MAX 1 Sep-20-2006 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0808ATG TO-220 Lead Free 80 6.5 50 8 A m S On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 10V, ID = 80A VDS = 50V, ID = 80A Ciss Coss Crss Qg Qgs Qgd 2 4645 VGS = 0V, VDS = 25V, f = 1MHz 780 115 195 VDS =60V, VGS = 10V, ID = 80A 18 VDD = 40V, ID 40A, VGS = 10V, RGS = 2.5 150 70 125 nS 42 67 nC pF Gate-Source Charge2 Gate-Drain Charge Rise Time2 Turn-Off Delay Time Fall Time2 2 2 Turn-On Delay Time td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IF = 40A, VGS = 0V 120 200 410 80 250 1.3 A V nS A nC Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P0808ATG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 Sep-20-2006 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0808ATG TO-220 Lead Free Typical Output Characteristics 1000 Typical Transfer Characteristics 1000 ID, Drain-to-Source Current(A) VDS= 25V ID, Drain-to-Source Current(A) TJ=25C 8.0V 10V 7.0V 6.0V 5.5V 5.0V 100 100 10 0.1 1 10 100 10 4.0 5.0 6.0 7.0 8.0 9.0 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Normalized On-Resistance Vs.Temperature 3.0 Capacitance-Characteristics 7000 6000 Ciss 5000 4000 3000 2000 Crss 1000 0 1 10 100 Coss RDS(ON), Normalized Drain-to-Source On Resistance ID= 40A VGS= 0V, f=1 MHZ 2.5 2.0 1.5 1.0 0.5 VGS= 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature(C) C, Capacitance(pF) VDS, Drain-to-Source Voltage(V) Typical Gate Charge Vs. Gate-to-Source Voltage 20 ID= 40A Typical Source-Drain Diode Forward Voltage 1000 VGS, Gate-to-Source Voltage(V) 15 ISD, Rrverse Drain Current(A) VDS= 37V 12 100 60V TJ=150 C 10 8 4 TJ=25 C 1 0 0 50 100 150 200 VGS= 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 QG, Total Gate Charge (nC) VSD, Source-to-Drain Voltage(V) 3 Sep-20-2006 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0808ATG TO-220 Lead Free Maximum Safe Operating Area 1000 Transient Thermal Respence Curre 1 ID, Drain-to-Source Current(A) r(t), Normalized Effctive Transient Thermal Resistance OPERATION IN THIS AREA LIMTED BY RDS(on) D=0.5 100 100sec 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE Notes: 1.RJC(t)=r(t)*R 2.RJC=0.65C/W 3.Tj+Tc=P*RJC(t) 4.Duty Cycle, D=t1/t2 0.001 P(PK) t1 t2 10 1msec Tc=25 C RJC=0.65 C/W Sing Pulse 10msec 100 1000 0.01 0.00001 0.0001 1 1 10 VDS, Drain-to-Source Voltage(V) 0.01 0.1 t1, Rectangular Pulse Duration(sec) 4 Sep-20-2006 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0808ATG TO-220 Lead Free TO-220 (3-Lead) MECHANICAL DATA mm Dimension Min. A B C D E F G 28.5 14.6 8.4 0.72 9.78 2.61 Typ. 10.16 2.74 20 28.9 15.0 8.8 0.8 29.3 15.4 9.2 0.88 Max. 10.54 2.87 H I J K L M N Dimension Min. 2.4 1.19 4.4 1.14 2.3 0.26 Typ. 2.54 1.27 4.6 1.27 2.6 0.46 7 Max. 2.68 1.35 4.8 1.4 2.9 0.66 mm 5 Sep-20-2006 |
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